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Ordering number : ENA0729
TF246
SANYO Semiconductors
DATA SHEET
TF246
Features
* * * * *
N-channel Silicon Junction FET
Electret Condenser Microphone Applications
Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 30 150 --55 to +150 Unit V mA mA mW C C
Electrical Characteristics at Ta=25C
Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Making : F * : The TF246 is classified by IDSS as follows : (unit : A) Rank IDSS 4 140 to 240 5 210 to 350 Symbol V(BR)GDO VGS(off) IDSS IG=-100A VDS=5V, ID=1A VDS=5V, VGS=0V Conditions Ratings min --20 -0.2 140* --0.6 --1.0 350* typ max Unit V V A
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40407GB TI IM TC-00000316 No. A0729-1/4
TF246
Continued from preceding page.
Parameter Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Voltage Gain Reduced Voltage Characteristic Frequency Characteristic Total Harmonic Distortion Output Noise Voltage Symbol yfs Ciss Crss GV GVV Gvf THD VNO Conditions VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1MHz VDS=5V, VGS=0V, f=1MHz VIN=10mV, f=1kHz VIN=10mV, f=1kHz, VCC=4.51.5V f=1kHz to 110Hz VIN=30mV, f=1kHz VIN=0V, A curve 1.2 --110 Ratings min 0.5 typ 1.0 3.5 0.65 --3.0 --0.9 --3.5 --1.0 max Unit mS pF pF dB dB dB % dB
[Ta=25C, VCC=4.5V, RL=1k, Cin=15pF, See specified Test Circuit.]
Package Dimensions
unit : mm (typ) 7055-001
0.6
0.1
Test Circuit
!
0.2
0.11 0 to 0.02
Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic
1k VCC=4.5V VCC=1.5V
1.0 0.8
0.1
15pF
0.175
0.15
33F +
VTVM V
THD
BA
0.27
OSC
0.05
1 : Drain 2 : Source 3 : Gate SANYO : USFP
Output Impedance
0.05
!
500 450 400
ID -- VDS
500 450 400
ID -- VDS
Drain Current, ID -- A
350 300 250 200 150 100 50 0 0 1 2 3 4 5 6
Drain Current, ID -- A
350 300 250 200
VGS=0V
VGS=0V
--0.1V
--0.1V
150 100 50 0 0 1 2 3
--0.2V
--0.3V --0.4V
7 8
--0.2V
--0.5V
9 10 IT02310
--0.3V --0.4V
4
--0.5V
5 IT03015
Drain-to-Source Voltage, VDS -- V
Drain-to-Source Voltage, VDS -- V
No. A0729-2/4
TF246
500 450 400
ID -- VGS
VDS=5V
400 360 320
ID -- VGS
VDS=5V
Drain Current, ID -- A
350 300 250 200 150 100 50 0 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0
Drain Current, ID -- A
280 240 200 160 120 80 40 0 --1.0 --0.9 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3
--2 5 C
--0.2 --0.1
A 0 35 = SS A ID 0 25 A 0 15
Ta =7 5 C
25 C
--0
Gate-to-Source Voltage, VGS -- V
1.3
IT02312 -0.80 -0.75
yfs -- IDSS
Gate-to-Source Voltage, VGS -- V
IT02313
VGS(off) -- IDSS
Forward Transfer Admittance, yfs -- mS
1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0
Cutoff Voltage, VGS(off) -- V
VDS=5V VGS=0V f=1kHz
VDS=5V ID=1A
-0.70 -0.65 -0.60 -0.55 -0.50 -0.45 -0.40
100
200
300
400
Drain Current, IDSS -- A
2
500 IT02314 5
0
100
200
300
400
Ciss -- VDS
Drain Current, IDSS -- A
500 IT12277
Crss -- VDS
Reverse Transfer Capacitance, Crss -- pF
VGS=0V f=1MHz
3 2
VGS=0V f=1MHz
Input Capacitance, Ciss -- pF
10 7 5
1.0 7 5
3 2
3 2
1.0 7 1.0 2 3 5 7 10 2 3
0.1 7 1.0 2 3 5 7 10 2 3
Drain-to-Source Voltage, VDS -- V
0
IT03814 --0.5
GV -- IDSS
Drain-to-Source Voltage, VDS -- V
IT03815
GVV -- IDSS
--1
Voltage Gain, GV -- dB
--2
GV : VCC=4.5V VIN=10mV RL=1.0k f=1MHz IDSS : VDS=5.0V
Reduced Voltage Characteristic, GVV -- dB
--0.7
GVV : VCC=4.5V1.5V VIN=10mV f=1kHz IDSS : VDS=5.0V
--0.9
--3
--1.1
--4
--1.3
--5
--1.5
--6 0 100 200 300 400
--1.7 0 100 200 300 400
Drain Current, IDSS -- A
500 IT09954
Drain Current, IDSS -- A
500 IT02321
No. A0729-3/4
TF246
100
THD -- VIN
Total Harmonic Distortion, THD -- %
2.5
THD -- IDSS
THD : VCC=4.5V VIN=30mV f=1MHz IDSS : VDS=5.0V
Total Harmonic Distortion, THD -- %
THD : VCC=4.5V f=1kHz VIN=30mV IDSS : VDS=5.0V
10
2.0
250A
150A I DSS=
350A
1.5
1.0
1.0
0.5
0.1 0 50 100 150 200 IT02316
0 0 100 200 300 400
Input Voltage, VIN -- mV
--111 --112
VNO -- IDSS
Drain Current, IDSS -- A
35
500 IT09955
PD -- Ta
Allowable Power Dissipation, PD -- mW
Output Noise Voltage, VNO -- dB
--113 --114 --115 --116 --117 --118 --119 --120 0 100 200
VNO : VCC=4.5V VIN=0V, ACurve RL=1.0k IDSS : VDS=5.0V
30
25
20
15
10
5 0
300
400
Drain Current, IDSS -- A
500 IT02325
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
IT12179
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of April, 2007. Specifications and information herein are subject to change without notice.
PS No. A0729-4/4

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